Allwin21 ACCUTHERMO AW810M

ALLWIN21 ACCUTHERMO AW810M RTP Rapid Thermal Processing System. Date of MFG 09/2021. Very Light Use. The system uses high intensity visible radiation to heat single wafer for short process periods of time at precisely controlled temperatures. The process periods are typically 1-600 seconds in duration, although periods of up to 9999 seconds can be selected. These capabilities, combined with the heating chamber's cold-wall design and superior heating uniformity, provide significant advantages over conventional furnace processing. AccuThermo AW 810 Software Key Featureso Integrated process control systemo Real time graphics displayo Real time process data acquisition, display, and analysiso Programmed comprehensive calibration and diagnostic functionso Closed-loop temperature control with temperature sensing.o Precise time-temperature profiles tailored to suit specific processrequirements.o Faster, easier Programmable comprehensive calibration of allsubsystems, leading to enhanced process results.o A recipe editor to create and edit recipes to fully automate theprocessing of wafers inside the AccuThermo RTPo Validation of the recipe so improper control sequences will berevealed.o Storage of multiple recipes, process data and calibration files so thatprocess and calibration results can be maintained and compared overtime.o Passwords provide security for the system, recipe editing, diagnostics,calibration and setup functions.o Simple and easy to use menu screen which allow a process cycle to beeasily defined and executed.o Troubleshooting feature which allows engineers and service personnelto activate individual subassemblies and functions. More I/O, AD/DAldquo;exposerdquo;.o Use PowerSum technology to detect the process and increase Yield.o Watchdog function: If this board looses communication with the controlsoftware, it will shut down all processes and halt the system untilcommunication is restored.o GEM/SECS II function (Optional).AccuThermo AW 810 Specifications Wafer sizes: Small pieces, 2", 3", 4", 5", 6", 8" wafer capability-------CURRENTLY CONFIGURED WITH TRAY FOR 8" SQUARES. Recommended ramp up rate: Programmable, 10deg;C to 120deg;C persecond. Maximum Rate: 200deg;C (NOT RECOMMENDED) Recommended steady state duration: 0-300 seconds per step. Ramp down rate: Non-programmable, 10deg;C to 200deg;C per second. Recommended steady state temperature range: 150deg;C - 1150deg;C.Maximum 1250deg;C (NOT RECOMMENDED) ERP Pyrometer 450-1250deg;C with plusmn;1deg;C accuracy when calibrated againstan instrumented thermocouple wafer. Thermocouple 100-800deg;C with plusmn;0.5deg;C accuracy amp; rapid response. Temperature repeatability: plusmn;0.5deg;C or better at 1150deg;C wafer-to-wafer.(Repetition specifications are based on a 100-wafer set.) Temperature uniformity: plusmn;8deg;C across an 8" (200 mm) wafer at 1150deg;C.(This is a one sigma deviation 100 angstrom oxide.) For a titaniumsilicide process, no more than 6% increase in non-uniformity during thefirst anneal at 650deg;C to 700deg;C. Process/Purge gas inputs: Any inert and/or non-toxic gas regulated to 30PSIG and pre-filtered to 1 micron. Typically, N2, O2), Ar, He, forming gas,NH3, N2O2 are used.---Currently configured with 2 MFC for gas inputs. 208V, 3Ph, 60Hz, 100A
InvNumber: 65026